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IRF6648 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRF6648
メーカーIR
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 86 A
Drain Current-Max (ID) 86 A
Drain-source On Resistance-Max 0.007 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.8 W
Pulsed Drain Current-Max (IDM) 260 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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