| 型番 | IRF6603TR1 |
|---|---|
| メーカー | IR |
| データシート | ![]() |
| Configuration | SINGLE |
| Drain Current-Max (Abs) (ID) | 92 A |
| Drain Current-Max (ID) | 92 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 42 W |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| 会社名称 | International Rectifier |
|---|---|
| 設立 | 1947 |
| 所在地 | 233 Kansas St., El Segundo, California 90245,USA |
| URL | http://www.irf.com/ |
IRF6603TR1 - IR の商品詳細ページです。