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IRF6100 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRF6100
メーカーIR
データシートProduct_list_pdf
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 64 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (Abs) (ID) 5.1 A
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 0.065 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 36 W
Power Dissipation-Max (Abs) 2.2 W
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form BALL
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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