IRF5M5210 Ir

IRF5M5210 - IR の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IRF5M5210 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRF5M5210
メーカーIR
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 520 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 34 A
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.07 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 136 A
Qualification Status Not Qualified
Reference Standard MIL-19500
Sub Category Other Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 178 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRF5M5210のレビュー

IRF5M5210 のご注文について