型番 | IRF5803TRPBF |
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メーカー | IR |
Configuration | SINGLE |
Drain Current-Max (Abs) (ID) | 3.4 A |
Drain Current-Max (ID) | 3.4 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 2 |
Number of Elements | 1 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 2 W |
Sub Category | Other Transistors |
Surface Mount | YES |
Terminal Finish | MATTE TIN |
Time@Peak Reflow Temperature-Max (s) | 30 |
会社名称 | International Rectifier |
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設立 | 1947 |
所在地 | 233 Kansas St., El Segundo, California 90245,USA |
URL | http://www.irf.com/ |
IRF5803TRPBF - IR の商品詳細ページです。