IRF5210 Ir

IRF5210 - IR の商品詳細ページです。

1
IRF5210
  • IRF5210
  • IRF5210
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
2営業日以内に回答いたします

IRF5210 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRF5210
メーカーIR
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (Abs) (ID) 35 A
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.06 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

IRF5210のレビュー

IRF5210 のご注文について