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IRF1010N
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IRF1010N の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | IRF1010N |
|---|---|
| メーカー | IR |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) | 250 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (Abs) (ID) | 68 A |
| Drain Current-Max (ID) | 72 A |
| Drain-source On Resistance-Max | 0.011 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Peak Reflow Temperature (Cel) | 225 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 130 W |
| Power Dissipation-Max (Abs) | 115 W |
| Pulsed Drain Current-Max (IDM) | 290 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | International Rectifier |
|---|---|
| 設立 | 1947 |
| 所在地 | 233 Kansas St., El Segundo, California 90245,USA |
| URL | http://www.irf.com/ |
IRF1010Nのレビュー
IRF1010N のご注文について
050-3612-7934
045-263-9989
IRF1010N - IR の商品詳細ページです。