GA200SA60S データシート Ir

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GA200SA60S の詳細情報

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型番GA200SA60S
メーカーIR
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 630 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1280 ns
Turn-on Time-Nom (ton) 132 ns
VCEsat-Max 1.3 V
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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