FA57SA50LC Ir

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FA57SA50LC の詳細情報

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型番FA57SA50LC
メーカーIR
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 725 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 57 A
Drain Current-Max (ID) 57 A
Drain-source On Resistance-Max 0.08 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 625 W
Power Dissipation-Max (Abs) 625 W
Pulsed Drain Current-Max (IDM) 228 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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