AUIRFR1018E Ir

AUIRFR1018E - IR の商品詳細ページです。

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AUIRFR1018E
  • AUIRFR1018E
  • AUIRFR1018E
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2営業日以内に回答いたします

AUIRFR1018E の詳細情報

  • 仕様・詳細
  • メーカー情報
型番AUIRFR1018E
メーカーIR
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 88 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 79 A
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.0084 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 315 A
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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