2N6796 Ir

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2N6796 の詳細情報

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型番2N6796
メーカーIR
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 4.3 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 8 A
Drain Current-Max (ID) 7.4 A
Drain-source On Resistance-Max 0.18 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-205
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Reference Standard CECC
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 85 ns
Turn-on Time-Max (ton) 105 ns
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

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