2N6770 データシート

Name: 2N6770
Brand: IR
SKU: 30027685-0000-0000-0000

2N6770 - IR の商品詳細ページです。

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2N6770 の詳細情報

型番	2N6770
メーカー	IR
データシート
Additional Feature	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	8 mJ
Case Connection	DRAIN
Configuration	SINGLE
DS Breakdown Voltage-Min	500 V
Drain Current-Max (Abs) (ID)	12 A
Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.4 ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	200 pF
JEDEC-95 Code	TO-3
JESD-30 Code	O-MBFM-P2
JESD-609 Code	e0
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 Cel
Operating Temperature-Min	-55 Cel
Package Body Material	METAL
Package Shape	ROUND
Package Style	FLANGE MOUNT Meter
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	150 W
Power Dissipation-Max (Abs)	150 W
Pulsed Drain Current-Max (IDM)	25 A
Qualification Status	Not Qualified
Reference Standard	MILITARY STANDARD (USA)
Sub Category	FET General Purpose Power
Surface Mount	NO
Terminal Finish	TIN LEAD
Terminal Form	PIN/PEG
Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-off Time-Max (toff)	220 ns
Turn-on Time-Max (ton)	85 ns