19MT050XF データシート Ir

19MT050XF - IR の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

19MT050XF の詳細情報

  • 仕様・詳細
  • メーカー情報
型番19MT050XF
メーカーIR
データシートProduct_list_pdf
Avalanche Energy Rating (Eas) 493 mJ
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 31 A
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.25 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-P16
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 4
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1000 W
Pulsed Drain Current-Max (IDM) 124 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称International Rectifier
設立1947
所在地233 Kansas St., El Segundo, California 90245,USA
URLhttp://www.irf.com/

19MT050XFのレビュー

19MT050XF のご注文について