型番 | RFP22N10 |
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メーカー | INTERSIL |
データシート | ![]() |
Additional Feature | MEGAFET |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (Abs) (ID) | 22 A |
Drain Current-Max (ID) | 22 A |
Drain-source On Resistance-Max | 0.08 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 100 W |
Power Dissipation-Max (Abs) | 100 W |
Pulsed Drain Current-Max (IDM) | 50 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Turn-off Time-Max (toff) | 120 ns |
Turn-on Time-Max (ton) | 60 ns |
会社名称 | Intersil Americas LLC |
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設立 | 1967 |
所在地 | 1001 Murphy Ranch Road Milpitas, CA 95035 USA |
URL | http://www.intersil.com/ |
RFP22N10 - INTERSIL の商品詳細ページです。