型番 | RF1S630 |
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メーカー | INTERSIL |
データシート | ![]() |
Additional Feature | HIGH INPUT IMPEDANCE |
Avalanche Energy Rating (Eas) | 150 mJ |
Case Connection | DRAIN |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (Abs) (ID) | 9 A |
Drain Current-Max (ID) | 9 A |
Drain-source On Resistance-Max | 0.4 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e0 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 75 W |
Pulsed Drain Current-Max (IDM) | 36 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | Intersil Americas LLC |
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設立 | 1967 |
所在地 | 1001 Murphy Ranch Road Milpitas, CA 95035 USA |
URL | http://www.intersil.com/ |
RF1S630 - INTERSIL の商品詳細ページです。