HUF75531SK8T データシート Intersil

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HUF75531SK8T の詳細情報

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型番HUF75531SK8T
メーカーINTERSIL
データシートProduct_list_pdf
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (Abs) (ID) 6 A
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.03 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Intersil Americas LLC
設立1967
所在地1001 Murphy Ranch Road Milpitas, CA 95035 USA
URLhttp://www.intersil.com/

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