型番 | TE28F800B3B90 |
---|---|
メーカー | INTEL |
Access Time-Max (ns) | 90 |
Additional Feature | USER-SELECTABLE 12V VPP; BOTTOM BOOT BLOCK |
Boot Block | BOTTOM |
Command User Interface | YES |
DLA Qualification | Not Qualified |
Data Polling | NO |
J-STD-609 Code | e0 |
JESD-30 Code | R-PDSO-G48 |
Length (mm) | 18.4 |
Memory Density (bits) | 8388608 |
Memory IC Type | FLASH |
Memory Organization | 512KX16 |
Memory Width | 16 |
Number of Functions | 1 |
Number of Sectors/Size | 8,15 |
Number of Terminals | 48 |
Number of Words (words) | 524288 |
Number of Words Code | 512K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max (Cel) | 85 |
Operating Temperature-Min (Cel) | -40 |
Package Body Material | PLASTIC/EPOXY |
Package Code | TSOP1 |
Package Equivalence Code | TSSOP48,.8,20 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE Meter |
Parallel/Serial | PARALLEL |
Power Supplies (V) | 1.8/3.6,3/3.3 |
Programming Voltage (V) | 2.7 |
Seated Height-Max (mm) | 1.2 |
Sector Size (words) | 4K,32K |
Standby Current-Max (A) | 5.0E-6 |
Sub Category | Flash Memories |
Supply Current-Max (mA) | 35 |
Supply Voltage-Max (V) | 3.6 |
Supply Voltage-Min (V) | 2.7 |
Supply Voltage-Nom (V) | 3 |
Surface Mount | YES |
Technology | MOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Pitch (mm) | 0.5 |
Terminal Position | DUAL |
Toggle Bit | NO |
Type | NOR TYPE |
Width (mm) | 12 |
会社名称 | Intel Corporation |
---|---|
設立 | 1989 |
所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
URL | http://www.intel.com/ |
TE28F800B3B90 - INTEL の商品詳細ページです。