型番 | TE28F008B3BA90 |
---|---|
メーカー | INTEL |
Access Time-Max | 90 ns |
Additional Feature | BOTTOM BOOT BLOCK |
Boot Block | BOTTOM |
Command User Interface | YES |
Data Polling | NO |
Endurance | 100000 Write/Erase Cycles |
JESD-30 Code | R-PDSO-G40 |
JESD-609 Code | e0 |
Length | 18.4 mm |
Memory Density | 8388608 bit |
Memory IC Type | FLASH |
Memory Width | 16 |
Number of Functions | 1 |
Number of Sectors/Size | 8,15 |
Number of Terminals | 40 |
Number of Words | 524288 words |
Number of Words Code | 512K |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -40 Cel |
Organization | 512KX16 |
Package Body Material | PLASTIC/EPOXY |
Package Code | SOP |
Package Equivalence Code | TSSOP40,.8,20 |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies | 1.8/3.6,3/3.3 V |
Programming Voltage | 2.7 V |
Qualification Status | Not Qualified |
Seated Height-Max | 1.2 mm |
Sector Size | 8K,64K Words |
Standby Current-Max | 5.0E-6 Amp |
Sub Category | Flash Memories |
Supply Current-Max | 0.055 mA |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | GULL WING |
Terminal Pitch | 0.5 mm |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Toggle Bit | NO |
Type | NOR TYPE |
Width | 12 mm |
会社名称 | Intel Corporation |
---|---|
設立 | 1989 |
所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
URL | http://www.intel.com/ |
TE28F008B3BA90 - INTEL の商品詳細ページです。