| 型番 | RD28F3208C3B110 |
|---|---|
| メーカー | INTEL |
| データシート | ![]() |
| Access Time-Max | 110 ns |
| Additional Feature | SRAM IS ORGANISED AS 512K X 16 |
| JESD-30 Code | R-PBGA-B68 |
| JESD-609 Code | e0 |
| Length | 14 mm |
| Memory Density | 33554432 bit |
| Memory IC Type | MEMORY CIRCUIT |
| Memory Width | 16 |
| Mixed Memory Type | FLASH+SRAM |
| Number of Functions | 1 |
| Number of Terminals | 68 |
| Number of Words | 2097152 words |
| Number of Words Code | 2M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -25 Cel |
| Organization | 2MX16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | LFBGA |
| Package Equivalence Code | BGA68,8X12,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH Meter |
| Power Supplies | 3 V |
| Qualification Status | Not Qualified |
| Seated Height-Max | 1.4 mm |
| Standby Current-Max | 6.0E-6 Amp |
| Sub Category | Other Memory ICs |
| Supply Current-Max | 0.055 mA |
| Supply Voltage-Max (Vsup) | 3.3 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Width | 8 mm |
| 会社名称 | Intel Corporation |
|---|---|
| 設立 | 1989 |
| 所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
| URL | http://www.intel.com/ |
RD28F3208C3B110 - INTEL の商品詳細ページです。