RD28F1604C3BD70 データシート Intel

RD28F1604C3BD70 - INTEL の商品詳細ページです。

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RD28F1604C3BD70 の詳細情報

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  • メーカー情報
型番RD28F1604C3BD70
メーカーINTEL
データシートProduct_list_pdf
Access Time-Max 70 ns
Additional Feature SRAM IS ORGANIZED AS 256K X 16
JESD-30 Code R-PBGA-B66
JESD-609 Code e0
Length 10 mm
Memory Density 16777216 bit
Memory IC Type MEMORY CIRCUIT
Memory Width 16
Mixed Memory Type FLASH+SRAM
Number of Functions 1
Number of Terminals 66
Number of Words 1048576 words
Number of Words Code 1M
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 Cel
Operating Temperature-Min -25 Cel
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA66,8X12,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Power Supplies 3 V
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 5.0E-6 Amp
Sub Category Other Memory ICs
Supply Current-Max 0.045 mA
Supply Voltage-Max (Vsup) 3.3 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL EXTENDED
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm
会社名称Intel Corporation
設立1989
所在地2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA
URLhttp://www.intel.com/

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