型番 | RD28F1602C3B70 |
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メーカー | INTEL |
データシート | ![]() |
Access Time-Max | 70 ns |
Additional Feature | SRAM IS ORGANIZED AS 256K X 16 |
JESD-30 Code | R-PBGA-B66 |
Length | 10 mm |
Memory Density | 16777216 bit |
Memory IC Type | MEMORY CIRCUIT |
Memory Width | 16 |
Mixed Memory Type | FLASH+SRAM |
Number of Functions | 1 |
Number of Terminals | 66 |
Number of Words | 1048576 words |
Number of Words Code | 1M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -25 Cel |
Organization | 1MX16 |
Package Body Material | PLASTIC/EPOXY |
Package Code | LFBGA |
Package Equivalence Code | BGA66,8X12,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, LOW PROFILE, FINE PITCH Meter |
Peak Reflow Temperature (Cel) | 240 |
Power Supplies | 3 V |
Qualification Status | Not Qualified |
Seated Height-Max | 1.4 mm |
Standby Current-Max | 4.0E-6 Amp |
Sub Category | Other Memory ICs |
Supply Current-Max | 0.04 mA |
Supply Voltage-Max (Vsup) | 3.3 V |
Supply Voltage-Min (Vsup) | 2.7 V |
Supply Voltage-Nom (Vsup) | 3 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL EXTENDED |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 |
Width | 8 mm |
会社名称 | Intel Corporation |
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設立 | 1989 |
所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
URL | http://www.intel.com/ |
RD28F1602C3B70 - INTEL の商品詳細ページです。