型番 | P21256-12 |
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メーカー | INTEL |
Access Time-Max | 120 ns |
I/O Type | SEPARATE |
JESD-30 Code | R-PDIP-T16 |
JESD-609 Code | e0 |
Memory Density | 262144 bit |
Memory IC Type | PAGE MODE DRAM |
Memory Width | 1 |
Number of Terminals | 16 |
Number of Words | 262144 words |
Number of Words Code | 256K |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0 Cel |
Organization | 256KX1 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | DIP |
Package Equivalence Code | DIP16,.3 |
Package Shape | RECTANGULAR |
Package Style | IN-LINE Meter |
Power Supplies | 5 V |
Qualification Status | Not Qualified |
Refresh Cycles | 256 |
Sub Category | DRAMs |
Supply Voltage-Nom (Vsup) | 5 V |
Surface Mount | NO |
Technology | MOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Form | THROUGH-HOLE |
Terminal Pitch | 2.54 mm |
Terminal Position | DUAL |
会社名称 | Intel Corporation |
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設立 | 1989 |
所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
URL | http://www.intel.com/ |
P21256-12 - INTEL の商品詳細ページです。