型番 | GE28F160C3BD70 |
---|---|
メーカー | INTEL |
Access Time-Max (ns) | 70 |
Additional Feature | USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK |
Boot Block | BOTTOM |
Command User Interface | YES |
Common Flash Interface | YES |
DLA Qualification | Not Qualified |
Data Polling | NO |
J-STD-609 Code | e0 |
JESD-30 Code | R-PBGA-B46 |
Length (mm) | 7.286 |
Memory Density (bits) | 16777216 |
Memory IC Type | FLASH |
Memory Organization | 1MX16 |
Memory Width | 16 |
Moisture Sensitivity Level | 1 |
Number of Functions | 1 |
Number of Sectors/Size | 8,31 |
Number of Terminals | 46 |
Number of Words (words) | 1048576 |
Number of Words Code | 1M |
Operating Mode | ASYNCHRONOUS |
Operating Temperature-Max (Cel) | 85 |
Operating Temperature-Min (Cel) | -40 |
Package Body Material | PLASTIC/EPOXY |
Package Code | VFBGA |
Package Equivalence Code | BGA46,6X8,30 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter |
Parallel/Serial | PARALLEL |
Power Supplies (V) | 1.8/3.3,3/3.3 |
Programming Voltage (V) | 3 |
Seated Height-Max (mm) | 1 |
Sector Size (words) | 4K,32K |
Standby Current-Max (A) | 5.0E-6 |
Sub Category | Flash Memories |
Supply Current-Max (mA) | 18 |
Supply Voltage-Max (V) | 3.6 |
Supply Voltage-Min (V) | 2.7 |
Supply Voltage-Nom (V) | 3 |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | INDUSTRIAL |
Terminal Finish | TIN LEAD |
Terminal Form | BALL |
Terminal Pitch (mm) | 0.75 |
Terminal Position | BOTTOM |
Toggle Bit | NO |
Type | NOR TYPE |
Width (mm) | 6.964 |
会社名称 | Intel Corporation |
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設立 | 1989 |
所在地 | 2200 Mission College Blvd. Santa Clara, CA 95054-1549 USA |
URL | http://www.intel.com/ |
GE28F160C3BD70 - INTEL の商品詳細ページです。