| 型番 | E28F001BXB120 |
|---|
| メーカー | INTEL |
|---|
| データシート |  |
| Access Time-Max |
120 ns |
| Additional Feature |
DEEP POWER-DOWN; BOTTOM BOOT BLOCK |
| Boot Block |
BOTTOM |
| Command User Interface |
YES |
| Data Polling |
NO |
| Endurance |
100000 Write/Erase Cycles |
| JESD-30 Code |
R-PDSO-G32 |
| JESD-609 Code |
e0 |
| Length |
18.4 mm |
| Memory Density |
1048576 bit |
| Memory IC Type |
FLASH |
| Memory Width |
8 |
| Number of Functions |
1 |
| Number of Sectors/Size |
1,2,1 |
| Number of Terminals |
32 |
| Number of Words |
131072 words |
| Number of Words Code |
128K |
| Operating Mode |
ASYNCHRONOUS |
| Operating Temperature-Max |
70 Cel |
| Operating Temperature-Min |
0 Cel |
| Organization |
128KX8 |
| Output Characteristics |
3-STATE |
| Package Body Material |
PLASTIC/EPOXY |
| Package Code |
TSOP1 |
| Package Equivalence Code |
TSSOP32,.8,20 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE, THIN PROFILE Meter |
| Parallel/Serial |
PARALLEL |
| Power Supplies |
5 V |
| Programming Voltage |
12 V |
| Qualification Status |
Not Qualified |
| Seated Height-Max |
1.2 mm |
| Sector Size |
8K,4K,112K Words |
| Standby Current-Max |
1.0E-6 Amp |
| Sub Category |
Flash Memories |
| Supply Current-Max |
0.03 mA |
| Supply Voltage-Max (Vsup) |
5.5 V |
| Supply Voltage-Min (Vsup) |
4.5 V |
| Supply Voltage-Nom (Vsup) |
5 V |
| Surface Mount |
YES |
| Technology |
CMOS |
| Temperature Grade |
COMMERCIAL |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Terminal Form |
GULL WING |
| Terminal Pitch |
0.5 mm |
| Terminal Position |
DUAL |
| Toggle Bit |
NO |
| Type |
NOR TYPE |
| Width |
8 mm |
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