SPW32N50C3FKSA1 Infineon

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SPW32N50C3FKSA1 の詳細情報

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型番SPW32N50C3FKSA1
メーカーINFINEON
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 1100 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.11 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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