| 型番 | SPD18P06P |
|---|---|
| メーカー | INFINEON |
| データシート | ![]() |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (Abs) (ID) | 18.6 A |
| Drain Current-Max (ID) | 18.6 A |
| Drain-source On Resistance-Max | 0.13 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 80 W |
| Pulsed Drain Current-Max (IDM) | 74.4 A |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
SPD18P06P - INFINEON の商品詳細ページです。