SPB18P06P Infineon

SPB18P06P - INFINEON の商品詳細ページです。

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SPB18P06P
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SPB18P06P の詳細情報

  • 仕様・詳細
  • メーカー情報
型番SPB18P06P
メーカーINFINEON
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 151 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 18.6 A
Drain Current-Max (ID) 18.7 A
Drain-source On Resistance-Max 0.13 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 220
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 74.8 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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