SGD02N60 データシート Infineon

SGD02N60 - INFINEON の商品詳細ページです。

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SGD02N60 の詳細情報

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型番SGD02N60
メーカーINFINEON
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 63 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Rise Time-Max (tr) 18 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 354 ns
Turn-on Time-Nom (ton) 33 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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