SGD02N120 Infineon

SGD02N120 - INFINEON の商品詳細ページです。

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SGD02N120 の詳細情報

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型番SGD02N120
メーカーINFINEON
Case Connection COLLECTOR
Collector Current-Max (IC) 6.2 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 61 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Qualification Status Not Qualified
Rise Time-Max (tr) 24 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 375 ns
Turn-on Time-Nom (ton) 40 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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