型番 | SGB30N60 |
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メーカー | INFINEON |
データシート | ![]() |
Additional Feature | LOW CONDUCTION LOSS |
Case Connection | COLLECTOR |
Collector Current-Max (IC) | 41 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | SINGLE |
Fall Time-Max (tf) | 70 ns |
Gate-emitter Thr Voltage-Max | 5 V |
Gate-emitter Voltage-Max | 20 V |
JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Temperature-Max | 150 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Peak Reflow Temperature (Cel) | 245 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 250 W |
Qualification Status | Not Qualified |
Rise Time-Max (tr) | 58 ns |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | YES |
Terminal Finish | TIN |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | MOTOR CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 391 ns |
Turn-on Time-Nom (ton) | 76 ns |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
SGB30N60 - INFINEON の商品詳細ページです。