SGB10N60A データシート Infineon

SGB10N60A - INFINEON の商品詳細ページです。

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SGB10N60A の詳細情報

  • 仕様・詳細
  • メーカー情報
型番SGB10N60A
メーカーINFINEON
データシートProduct_list_pdf
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 32 ns
Gate-emitter Thr Voltage-Max 5 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 92 W
Qualification Status Not Qualified
Rise Time-Max (tr) 15 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 224 ns
Turn-on Time-Nom (ton) 40 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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