型番 | PTF141501E |
---|---|
メーカー | INFINEON |
Additional Feature | HIGH RELIABILITY |
Case Connection | SOURCE |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 65 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | L BAND |
JESD-30 Code | R-CDFM-F2 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 200 Cel |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 417 W |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | YES |
Terminal Form | FLAT |
Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 10 |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
会社名称 | Infineon Technologies AG |
---|---|
設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
PTF141501E - INFINEON の商品詳細ページです。