MMBTA56LT1 Infineon

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MMBTA56LT1 の詳細情報

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型番MMBTA56LT1
メーカーINFINEON
Additional Feature TR, 7 INCH: 3000
Collector Current-Max (IC) 0.5 A
Collector-base Capacitance-Max 7 pF
Collector-emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.225 W
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 50 MHz
VCEsat-Max 0.25 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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