IRLML2803TRPBF Infineon

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IRLML2803TRPBF の詳細情報

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型番IRLML2803TRPBF
メーカーINFINEON
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
DS Breakdown Voltage-Min (V) 30
Drain Current-Max (Abs) (ID) 1.2 A
Drain Current-Max (Abs) (ID) (A) 1.2
Drain Current-Max (ID) 1.2 A
Drain Current-Max (ID) (A) 1.2
Drain-source On Resistance-Max 0.25 ohm
Drain-source On Resistance-Max (ohm) 0.25
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.34 W
Power Dissipation-Max (Abs) 0.54 W
Power Dissipation-Max (W) 0.54
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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