IRFH8334TRPBF Infineon

IRFH8334TRPBF - INFINEON の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

IRFH8334TRPBF の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IRFH8334TRPBF
メーカーINFINEON
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 35 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 14 A
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.009 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 100 A
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

IRFH8334TRPBFのレビュー

IRFH8334TRPBF のご注文について