IRF9310TRPBF Infineon

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IRF9310TRPBF の詳細情報

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型番IRF9310TRPBF
メーカーINFINEON
Avalanche Energy Rating (Eas) 630 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
DS Breakdown Voltage-Min (V) 30
Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A
Drain Current-Max (ID) (A) 20
Drain-source On Resistance-Max 0.0046 ohm
Drain-source On Resistance-Max (ohm) 0.0046
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 880 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Length 5mm
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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