IRF530NSTRLPBF Infineon

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IRF530NSTRLPBF の詳細情報

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型番IRF530NSTRLPBF
メーカーINFINEON
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Application SWITCHING
Avalanche Energy Rating (Eas) 93 mJ
Avalanche Energy Rating (Eas) (mJ) 93
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 100 V
DS Breakdown Voltage-Min (V) 100
Drain Current-Max (ID) 17 A
Drain Current-Max (ID) (A) 17
Drain-source On Resistance-Max 0.09 ohm
Drain-source On Resistance-Max (ohm) 0.09
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Pulsed Drain Current-Max (IDM) (A) 60
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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