IRF530NS Infineon

IRF530NS - INFINEON の商品詳細ページです。

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IRF530NS の詳細情報

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型番IRF530NS
メーカーINFINEON
Additional Feature AVALANCHE RATED
Application SWITCHING
Avalanche Energy Rating (Eas) 93 mJ
Avalanche Energy Rating (Eas) (mJ) 93
Case Connection DRAIN
Configuration SINGLE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 100 V
DS Breakdown Voltage-Min (V) 100
Drain Current-Max (Abs) (ID) 17 A
Drain Current-Max (ID) 17 A
Drain Current-Max (ID) (A) 17
Drain-source On Resistance-Max 0.09 ohm
Drain-source On Resistance-Max (ohm) 0.09
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 60 A
Pulsed Drain Current-Max (IDM) (A) 60
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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