型番 | IPW60R070C6FKSA1 |
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メーカー | INFINEON |
Application | SWITCHING |
Avalanche Energy Rating (Eas) (mJ) | 1135 |
Configuration | SINGLE WITH BUILT-IN DIODE |
DLA Qualification | Not Qualified |
DS Breakdown Voltage-Min (V) | 600 |
Drain Current-Max (ID) (A) | 53 |
Drain-source On Resistance-Max (ohm) | 0.07 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
J-STD-609 Code | e3 |
JEDEC-95 Code | TO-247AA |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max (Cel) | 175 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) (A) | 159 |
Surface Mount | NO |
Terminal Finish | TIN |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Element Material | SILICON |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
IPW60R070C6FKSA1 - INFINEON の商品詳細ページです。