IPT012N08N5ATMA1 Infineon

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IPT012N08N5ATMA1 の詳細情報

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型番IPT012N08N5ATMA1
メーカーINFINEON
Avalanche Energy Rating (Eas) 817 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.0012 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1200 A
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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