型番 | IPT007N06N |
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メーカー | INFINEON |
Avalanche Energy Rating (Eas) | 1100 mJ |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 52 A |
Drain-source On Resistance-Max | 0.00075 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 458 pF |
JESD-30 Code | R-PSSO-F8 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 Cel |
Operating Temperature-Min | -55 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 375 W |
Pulsed Drain Current-Max (IDM) | 1200 A |
Surface Mount | YES |
Terminal Finish | TIN |
Terminal Form | FLAT |
Terminal Position | SINGLE |
Transistor Element Material | SILICON |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
IPT007N06N - INFINEON の商品詳細ページです。