IPT007N06N Infineon

IPT007N06N - INFINEON の商品詳細ページです。

1
IPT007N06N
  • IPT007N06N
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
  • no_image
2営業日以内に回答いたします

IPT007N06N の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IPT007N06N
メーカーINFINEON
Avalanche Energy Rating (Eas) 1100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.00075 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 458 pF
JESD-30 Code R-PSSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 1200 A
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

IPT007N06Nのレビュー

IPT007N06N のご注文について