IPP80P03P4-05 Infineon

IPP80P03P4-05 - INFINEON の商品詳細ページです。

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IPP80P03P4-05
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IPP80P03P4-05 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IPP80P03P4-05
メーカーINFINEON
Avalanche Energy Rating (Eas) 410 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (Abs) (ID) 80 A
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.005 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 137 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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