| 型番 | IPP020N08N5 |
|---|---|
| メーカー | INFINEON |
| Application | SWITCHING |
| Avalanche Energy Rating (Eas) (mJ) | 1228 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80 |
| Drain Current-Max (ID) (A) | 120 |
| Drain-source On Resistance-Max (ohm) | 0.002 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| J-STD-609 Code | e3 |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT Meter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) (A) | 480 |
| Surface Mount | NO |
| Terminal Finish | TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
IPP020N08N5 - INFINEON の商品詳細ページです。