| 型番 | IPLU300N04S4-R7 |
|---|---|
| メーカー | INFINEON |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) | 750 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 40 V |
| Drain Current-Max (ID) | 300 A |
| Drain-source On Resistance-Max | 0.00076 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-F8 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 1200 A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | MATTE TIN |
| Terminal Form | FLAT |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
IPLU300N04S4-R7 - INFINEON の商品詳細ページです。