IPL60R199CP Infineon

IPL60R199CP - INFINEON の商品詳細ページです。

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IPL60R199CP の詳細情報

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型番IPL60R199CP
メーカーINFINEON
Avalanche Energy Rating (Eas) 436 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 16.4 A
Drain Current-Max (ID) 16.4 A
Drain-source On Resistance-Max 0.199 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PSSO-N4
JESD-609 Code e3
Moisture Sensitivity Level 2A
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 51 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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