IPI80N06S207AKSA2 Infineon

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IPI80N06S207AKSA2 の詳細情報

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型番IPI80N06S207AKSA2
メーカーINFINEON
Avalanche Energy Rating (Eas) (mJ) 530
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min (V) 55
Drain Current-Max (ID) (A) 80
Drain-source On Resistance-Max (ohm) 0.0066
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max (Cel) 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE Meter
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) (A) 320
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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