- 半導体デバイス・電子部品TOP
- メーカー一覧
- INFINEON
- IPI110N20N3 G
IPI110N20N3 G
1
-
- 個
２営業日以内に回答いたします
IPI110N20N3 G の詳細情報
- 仕様・詳細
- メーカー情報
| 型番 | IPI110N20N3 G |
|---|---|
| メーカー | INFINEON |
| Avalanche Energy Rating (Eas) | 560 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (Abs) (ID) | 88 A |
| Drain Current-Max (ID) | 88 A |
| Drain-source On Resistance-Max | 0.011 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-262AA |
| JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE Meter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 300 W |
| Pulsed Drain Current-Max (IDM) | 352 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Finish | TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
IPI110N20N3 Gのレビュー
IPI110N20N3 G のご注文について
050-3612-7934
045-263-9989
IPI110N20N3 G - INFINEON の商品詳細ページです。