IPG20N10S4L-35 Infineon

IPG20N10S4L-35 - INFINEON の商品詳細ページです。

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IPG20N10S4L-35 の詳細情報

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型番IPG20N10S4L-35
メーカーINFINEON
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.035 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43 W
Pulsed Drain Current-Max (IDM) 80 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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