IPG20N04S4L-08 Infineon

IPG20N04S4L-08 - INFINEON の商品詳細ページです。

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IPG20N04S4L-08 の詳細情報

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型番IPG20N04S4L-08
メーカーINFINEON
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 145 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 20 A
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.0082 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 54 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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