IPD95R450P7 Infineon

IPD95R450P7 - INFINEON の商品詳細ページです。

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IPD95R450P7 の詳細情報

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型番IPD95R450P7
メーカーINFINEON
Application SWITCHING
Avalanche Energy Rating (Eas) 29 mJ
Avalanche Energy Rating (Eas) (mJ) 29
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 950 V
DS Breakdown Voltage-Min (V) 950
Drain Current-Max (Abs) (ID) (A) 14
Drain Current-Max (ID) 14 A
Drain Current-Max (ID) (A) 14
Drain-source On Resistance-Max 0.45 ohm
Drain-source On Resistance-Max (ohm) 0.45
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Power Dissipation-Max (W) 104
Pulsed Drain Current-Max (IDM) 43 A
Pulsed Drain Current-Max (IDM) (A) 43
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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